题目:Electrostatic Discharge Protection Solutions for Compound Semiconductor Technologies(面向化合物半导体器件的静电保护设计方案)
报告人:Juin J. Liou (刘俊杰)教授
报告时间:2023年11月13日周一15:30
地点:物联网工程学院B222
邀请人:梁海莲、刘俊良
报告摘要:The industry of microelectronics is highly vital to the global economy. While the research and development of microelectronics has been very active and fruitful in the past 40 years, many new technologies have emerged recently which makes the microelectronics field evolving, challenging, and unpredictable in the foreseeable future. Aside from the various semiconductor processes and technologies, reliability is also a critical measure to the quality of microelectronic devices/circuits/systems, as no products can prevail in the markets without a high level of reliability.
Compound semiconductor technologies have gained renewed attentions recently due to their high electron mobility and high breakdown voltage. These properties are highly useful for high power/high frequency applications such as automotive electronics and communication circuits.
An overview on the electromagnetic compatibility (EMC) and its subset called the electrostatic discharge (ESD) will first be introduced in this talk. This is followed by the discussions of the concept of compound semiconductor devices and the approach used to develop ESD protection solutions for compound semiconductor IC’s fabricated in SiGe, GaAs, and GaN processes.
报告人简介:
刘俊杰(英文:Juin Jei Liou)获得美国佛罗里达大学电子学科学士/硕士/博士、教育部长江学者(浙江大学)、教育部海外名师(北京交通大学)、教育部春辉学者(北京大学)。原美国中佛罗里达大学工学院终身教授/副院长,现任北方民族大学特聘教授。
刘俊杰教授是IEEE Fellow,IET Fellow,新加坡制造技术研究院院士,美国国家创新学院院士。曾经担任IEEE电子器件学会副主席、EDSSC,IPFA,ISNE等IEEE官方国际会议的荣誉大会主席、数个SCI期刊的客座主编。曾获得IEEE杰出成就奖、IEEE杰出教育奖、IEEE杰出讲座奖、美国政府杰出青年科学家奖,同时在国内外多所大学兼任讲座教授、荣誉教授包括:浙江大学,电子科技大学,郑州大学,西安理工大学,北方民族大学,桂林理工大学,台湾科技大学,台北科技大学,台湾逢甲大学,台湾长庚大学等。
刘俊杰教授毕身致力于集成电路与半导体技术,是集成电路静电防护与可靠性方面的国际权威,累计发表期刊论文超过360篇、会议论文超过260篇(包括120篇主题/邀请报告)、SCI他引超过7600次、h-index: 39;并且拥有13项美国发明专利和10项中国发明专利,发表著作13部,其中独立作者3部。作为国内集成电路可靠性和静电防护技术领域的拓荒者,刘俊杰教授先后在中国三所一流大学开创了集成电路静电防护学科和静电防护(ESD)实验室,担任多个重大科技项目的负责人,为中国在ESD领域的学科教育,科研成果,技术开发,与产学合作做出重大和突破性的贡献,也取得了许多标志性成果。