卞宝安 性别：男 出生日期：1979.9.1 职称、职务：教授 电话（手机）：15951567896 E-mail：baoanbian@jiangnan.edu.cn

【学术简介】

博士，教授，目前主要从事低维纳米材料结构及器件的研究。发表SCI论文30余篇。主持国家自然科学基金2项，主持中央高校基本科研业务经费1项。担任Applied Ph博士，教授，目前主要从事低维纳米材料及其器件和分子器件电子输运性质研究。发表SCI论文60余篇。主持国家自然科学基金2项，主持中央高校基本科研业务经费1项，主持企业合作项目3项。担任2D materials, Nanotechnology Applied Surface Science, Journal of applied Physics, Materials Chemistry and Physics, Physics Letter A, Chemical Physics等杂志的审稿人。2012年获批“江苏省青蓝工程-优秀青年骨干教师”称号,2017年获“江南大学优秀教育工作者,2020年获批“无锡市百名科技之星”。ysics A, Modern Physics Letters B,Journal of Semiconductors,Surface Review and Letters等杂志的审稿人。2012年获批“江苏省青蓝工程-优秀青年骨干教师”称号。

【工作及研究经历】：

2019.05至今，江南大学理学院，教授

2017.12-2018.12 Rice University访问学者

2010.09-2019.04江南大学理学院副教授

2008.06-2010.08江南大学理学院讲师

2005.09-2008/06北京师范大学博士

【研究领域】

低维材料及其功能性电子器件。

【主要论著】（著作和论文）

主要论文：:

[1] Sicheng Jing, Jinghua Pan, Wen Chen, Wei Li,Baoan Bian*, Bin Liao, Guoliang Wang,Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene, Computational Materials Science, 2022, 210:111463

[2] Sicheng Jing, Wen Chen, Jinghua Pan, Wei Li,Baoan Bian*,Bin Liao, Guoliang Wang,Electronic properties of Borophene/InSe van der Waals heterostructures,Materials Science in Semiconductor Processing, 2022,146: 106673

[3] Jinghua Pan,Sicheng Jing, Wen Chen, Wei Li,Baoan Bian*, Bin Liao, Guoliang Wang,Infuence of h-BN on electronic properties of GeS/InSe heterojunction, Applied Physics A, 2022,128:141

[4] Yamin Wu, Bin Liao, Guoliang Wang,Baoan Bian^*,Effect of Asymmetric Lateral Linking Groups on Electronic Transport in molecular device,Surface Review and Letters, 2022,29( 3 ):2250030

[5] Wei Li, Jinlei Wei, Wen Chen, Sicheng Jing, Jinghua Pan,Baoan Bian^*, Bin Liao,Guoliang Wang,The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors,Materials Science in Semiconductor Processing,2022, 138:106279

[6] Wei Li, Jinlei Wei, Wen Chen, Sicheng Jing, Jinghua Pan,Baoan Bian*, Bin Liao,Guoliang Wang,The in-plane metal contacted 5.1 nm JanusWSSe Schottky barrier field-effect transistors,Nanotechnology, 2021, 32: 475702

[7] Wei Li, Jinlei Wei,Baoan Bian*, Bin Liao,Guoliang Wang,Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions, Physica E , 2021,130 :114702

[8] Wei Li, Jinlei Wei,Baoan Bian*, Bin Liao,Guoliang Wang,The effect of different covalent bond connectionsand doping on transport properties of planar graphene/MoS2/graphene heterojunctions, Phys. Chem. Chem. Phys.,2021, 23: 6871

[9] Wei Li, Jinlei Wei,Baoan Bian*, Bin Liao,Guoliang Wang,Effect of edge contact on electronic transport in lateral Borophene/WTe2/ Borophene heterojunctions,Computational Materials Science,2021, 195:110502

[10] Huiqin Zhao, Feng Xie, Yushen Liu,Baoan Bian*, Guofeng Yang, Yu Ding, Yan Gu,Yingzhou Yu, Xiumei Zhang, Xinxia Huo, Bin Hua, Xianfeng Ni, Qian Fan, Xing Gu,Van der Waals heterostructures of Janus XSeTe (X = Mo, W) and arsenene monolayers: A first principles study,Materials Science in Semiconductor Processing,2021, 123:105588

[11] Yamin Wu, Bin Liao, Guoliang Wang,Baoan Bian*,Influence of molecular modification and linking group on Electronic Transport in molecular device,Surface Review and Letters, 2021,28( 6 ):2150042

[12] Jinlei Wei, Jing-Kai Huang, Jianhao Du,Baoan Bian*, Sean Li,Danyang Wang*,Effect of the geometry of precursor crucibles on the growth of MoS2 flakes by chemical vapor deposition, New J. Chem., 2020,44:21076

[13] Jinlei Wei, Wei Li, Bin Liao,Baoan Bian^*,Electronic and optical properties of vertical borophene/MoS2 heterojunctions, Materials Chemistry and Physics,2020, 252: 123305

[14]Baoan Bian^*,Jingjuan Yang, Jinlei Wei,Width dependent rectifying behavior in Schottky heterojunction based on black phosphorene,Materials Chemistry and Physics,2020, 239: 122048

[15]Baoan Bian^*,Jingjuan Yang, Xiaoxiao Han, Jinlei Wei,Electronic transport induced by asymmetric adsorption site of sulfur in molecular device,Surface Science,2019, 684:52

[16] Xiaoxiao Han, Jingjuan Yang, Peipei Yuan,Baoan Bian^*,Spin-dependent transport in all-carbon multifunctionalspintronic device,Eur. Phys. J. B,2019, 92: 32

[17]Baoan Bian^*,Jingjuan Yang, Xiaoxiao Han, Peipei Yuan, Bin Liao,Switching and oscillation of current along quinone based molecular device with graphene electrodes,Chemical Physics,2018,511:27

[18]Baoan Bian^*,Jingjuan Yang, Xiaoxiao Han, Haifeng Shi, Yuqiang Ding, Switching behavior induced by different substituents of group in single molecular device Eur. Phys. J. B,2018, 91: 184

[19]Baoan Bian^*, Yapeng Zheng, Peipei Yuan, Bin Liao, Yuqiang Ding, First-principles study on photoswitching behavior in single molecule junction, Surface Review and Letters, 2018,25,1850070

[20]Baoan Bian^*,Jingjuan Yang, Xiaoxiao Han, Peipei Yuan,Rectification in zigzag graphene/BN nanoribbon heterojunction,Modern Physics Letters B,2018,32:1850395

[21] Jingjuan Yang, Xiaoxiao Han, Peipei Yuan,Baoan Bian^*, Yixiang Wang, Effect of different substitution opposition on the switching behavior in single-molecule device with carbon nanotube electrods, Chem. Phys., 2018, 500: 74

[22] Jingjuan Yang, Xiaoxiao Han,Baoan Bian^*,Effect of the lateral linking groups on the switching behavior in single molecular device,Materials Chemistry and Physics,2018, 137: 178

[23] Jingjuan Yang, Xiaoxiao Han, Peipei Yuan,Baoan Bian^*, Bin Liao, Effects of different electrodes and substituent groups on molecular switching,Theoretical Chemistry Accounts,2018,137:77

[24] Jingjuan Yang, Xiaoxiao Han,Baoan Bian^*, Electronic transport induced by edge modifcation of graphene electrodes in single molecular device,Theoretical Chemistry Accounts,2018,137:178

[25] Jingjuan Yang, Xiaoxiao Han, Peipei Yuan,Baoan Bian^*, Bin Liao,Influence of spatial distribution of molecule on the switching behavior: A first-principles study,Journal of Theoretical and Computational Chemistry,2018,17( 6): 1850038

[26] Peipei Yuan, Xiaoxiao Han, Jingjuan Yang,Baoan Bian^*, Weibao Li, Yuming Wang, Xu Luo, Bin Liao, Effect of edge modification on the rectification in graphene ribbons device, Physica E, 2018, 95: 32-36

[27] Xiaoxiao Han, Jingjuan Yang, Peipei Yuan,Baoan Bian^*, Haifeng Shi, Yuqiang Ding,Spin-dependent transport in a multifunctional spintronic device withgraphene nanoribbon electrodes,Journal of Computational Electronics, 2018, 17:604

[28]Baoan Bian^*, Yapeng Zheng, Peipei Yuan, Bin Liao, Wei Chen, Weibao Li, Xiaotong Mo, Huaxiu An, Yuqiang Ding, First-principles study on photoswitching behavior and negative differential resistance in single molecule junction, Com. Theo. Chem., 2017, 1115: 185

[29]Baoan Bian^*, Yapeng Zheng, Peipei Yuan, Bin Liao, Wei Chen, Huaxiu An, Xiaotong Mo, Yuqiang Ding, Effect of the substitution of F on the photoswitching behavior in single molecular device,Phys. Lett. A, 2017, 381: 2748-2753

[30] Yi-Xiang Wang, Fuxiang Li,Baoan Bian, Interaction-induced phase transitions of type-II Weyl semimetals, Phys. Rev. B, 2017, 96:165203

[31] Yapeng Zheng,Baoan Bian^*, Peipei Yuan, Electronic transport properties of a quinone-based molecular switch, Eur. Phys. J. B 2016, 89: 191

[32] Peipei Yuan, Yapeng Zheng,Baoan Bian^*, Bin Liao, Reverse rectification and negative differential resistance effects in doped armchair grapheme ribbons device, Appl. Phys. A 2016,122: 863

[33]Baoan Bian^*, Bing Chu, Zhuomao Zhu, Yapeng Zheng, Effect of inserted Cu layer on CoFe/Cu/MgO/CoFe magnetic tunnel junction, Int. J. Mod.Phys. B 2015, 29: 1550171

[34] Wei Chen, Runfeng Chen,Baoan Bian, Xingao Li, Lianhui Wang, First-principles study of the electronic transport properties of a dihydroazulene-based molecular optical switch, Com. Theo. Chem., 2015, 1067 :114

[35]Baoan Bian, Yang Sun^*, Yingchun Yang, Projected shell model description for rotational bands in the proton emitter 141Ho, Phys.Rev.C, 2014,89:014317

[36] Yuan Niu,Baoan Bian*, Guohua Li. A new method for the calculation of the volume of paste in halftones. J. Imag. Sci. and Tech 2014,58: 10506

[37] Wei Chen,Ning Xu,Baolin Wang,Baoan Bian, The molecular spin filter constructed from 1D organic chain, Phy. Lett. A 2014,378: 2020

[38]Baoan Bian*, Fengshou Zhang, Hongyu Zhou,Effect of shell structure in the fusion reactions, Eur. Phys. J. A ,2010,43: 67

[39]Baoan Bian*, Fengshou Zhang, Effects of the entrance channel mass asymmetry in fusion reactions, Chin. Phys. C, 2010,34: 1602

[40]Baoan Bian*, Fengshou Zhang, Hongyu Zhou, Fusion enhancement in the reactions of neutron-rich nuclei, Nucl. Phys. A , 2009, 829:1

[41]Baoan Bian, Fengshou Zhang*, Hongyu Zhou, Entrance channel mass asymmetry dependence of compound nuclei formation, Phys. Lett. B,2008, 665: 314

[42]Baoan Bian, Fengshou Zhang*, Hongyu Zhou, Production cross sections of on different targets at 600 MeV/nucleon, Nucl. Phys. A, 2008,807:71

[43]Baoan Bian, Fengshou Zhang*, Hongyu Zhou, Fragmentation cross sections in heavy ion collisions, Int. J. Mod. Phys. E, 2008,17:1927

[44]Baoan Bian, Fengshou Zhang*, Hongyu Zhou, Fragmentation cross sections of on different targets at beam energies from 50 to 100 MeV/nucleon, Chin. Phys. Lett. , 2008,25,(2) , 451

[45]Baoan Bian, Fengshou Zhang*, Hongyu Zhou, Isospin effects of threshold energy of radial flow in heavy ion collisions, Chin. Phys. Lett., 2007, 24(6):1529

[46]Baoan Bian, Yaoming Di, Guilu Long, Yang Sun*, Jing-Ye Zhang, Javid A. Sheikh, Systematics of g factors of states in even-even nuclei from Gd to Pt: A microscopic description by the projected shell model, Phys. Rev. C, 2007,75:014312

【科研、教学项目】

科研项目：

1.国家自然科学基金-面上项目，11775099，包含三体力的原子核第一性蒙特卡罗壳模型，2018/01-2021/12，60万元，在研，参加(排名第二)

2.国家自然科学基金-青年基金，11005050，投影壳模型对质子发射核的研究，2011/01-2013/12，18万元，已结题，主持

3.国家自然科学基金-理论物理转款，10847136，超重核合成机制的理论研究，2009/01-2009/12，2万，已结题，主持

4.企业合作项目3项，主持

教学项目：

1.2015年江南大学教改项目“数理基础课复合型教学模式的研究与实践”

2.2017年江南大学教改项目“基于雨课堂与PaGamo的大学物理教学模式的研究与实践”

【科研、教学成果及获奖】

科研获奖：

1.2017年 无锡市自然科学优秀学术论文特等奖

2.2018年中国商业联合会“科学技术奖”三等奖（排名第二）

教学获奖：

1.2015年 江南大学教学成果奖二等奖（排名第二）

2.2018年 江南大学教学成果奖一等奖（排名第二）

【荣誉与奖励】

1.2020年无锡百名科技之星

2.2018年江南大学优秀教育工作者

3.2013年江南大学本科毕业论文优秀指导教师

4.2012年江苏省青蓝工程-优秀青年骨干教师

【在读硕、博士人数】

硕士5人

【已毕业硕、博士人数】

硕士7人

【以上资料更新日期】

2022年5月6日